Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility up to 300 cm2V−1s−1, which is considered promising candidate for next-generation power devices. However, its low thermal conductivity reckoned be severe issue in the management high-power The epitaxial integration thin films on silicon carbide (SiC) substrates possible solution tackling cooling problems, yet premature at Ga2O3/SiC interface would introduced due relatively SiC (3.2 MV/cm). In this paper, on-state properties as well characteristics Ga2O3-on-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated by using technology computer-aided design (TCAD) approach. Compared with full-Ga2O3 MOSFET, lattice temperature MOSFET was decreased nearly 100 °C thanks high SiC. voltage degradation >40% found an unoptimized MOSFET. Furthermore, optimizing device structure, significantly relieved. As result, work demonstrates existence provides feasible approaches further enhance performance hetero-integrated Ga2O3